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器件的模型一直是模擬／射頻集成電路工程師關心的問題。是否能建立一個盡可能反映器件行為的模型關系到整個集成電路設計的成敗。本書內容豐富，從主流模型的討論到小尺寸器件模型和量子效應的介紹，從模型參數的提取方法到模型在硬件描述語言中的應用等方面都作了詳細的論述。本書對設計工程師和器件工程師都有很好的參考價值。

Foreword
Hiroshi Iwai
Introduction
Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs
1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures
Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno
2 PSP: An advanced surface-potential-based MOSFET model
R. van Langevelde, and G. Gildenblat
3 EKV3.0: An advanced charge based MOS transistor model. A design-oriented MOS transistor compact model for next generation CMOS
Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz
4 Modelling using high-frequency measurements
Dominique Schreurs
5 Empirical FET models
Iltcho Angelov
6 Modeling the SOI MOSFET nonlinearities. An empirical approach
B. Parvais, A. Siligaris
7 Circuit level RF modeling and design
Nobuyuki Itoh
8 On incorporating parasitic quantum effects in classical circuit simulations
Frank Felgenhauer, Maik Begoin and Wolfgang Mathis
9 Compact modeling of the MOSFET in VHDL-AMS
Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny
10 Compact modeling in Verilog-A
Boris Troyanovsky, Patrick O'Halloran and Marek Mierzwinski
Index